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| AP2531GY Pb Free Plating Product Advanced Power Electronics Corp. Low Gate Charge Drive Low On-resistance Surface Mount Package RoHS Compliant SOT-26 S2 G1 S1 D1 G2 D2 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) ID P-CH BVDSS RDS(ON) ID 16V 58m 3.5A -16V 125m -2.5A Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-26 package is universally used for all commercial-industrial applications. G1 D1 D2 G2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 16 8 3.5 2.8 10 1.14 0.01 -55 to 150 -55 to 150 P-channel -16 8 -2.5 -2 -10 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 110 Unit /W Data and specifications subject to change without notice 200701051-1/7 AP2531GY N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS BVDSS/Tj o Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. 16 0.2 - Typ. 0.01 9 7 0.6 2 6 11 17 3 360 50 40 1.4 Max. Units 58 70 85 1 1 25 100 12 580 2 V V/ m m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=3A VGS=2.5V, ID=2A VGS=1.8V, ID=1A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=250uA VDS=5V, ID=3A VDS=16V, VGS=0V VDS=12V, VGS=0V VGS=8V ID=3A VDS=10V VGS=4.5V VDS=10V ID=1A RG=3.3,VGS=5V RD=10 VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 Test Conditions IS=0.9A, VGS=0V Min. - Typ. - Max. Units 1.3 V 2/7 AP2531GY P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Test Conditions VGS=0V, ID=-250uA VGS=-4.5V, ID=-2A VGS=-2.5V, ID=-1.6A VGS=-1.8V, ID=-1A Min. -16 -0.2 - Typ. 0.01 5 6 0.8 2 7 20 23 24 370 70 60 8 Max. 125 155 200 -1 -1 -25 100 10 600 12 Unit V V/ m m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=70 C) o o VDS=VGS, ID=-250uA VDS=-5V, ID=-2A VDS=-16V, VGS=0V VDS=-12V ,VGS=0V VGS=8V ID=-2A VDS=-10V VGS=-4.5V VDS=-10V ID=-1A RG=3.3,VGS=-5V RD=10 VGS=0V VDS=-25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 Test Conditions IS=-0.9A, VGS=0V Min. - Typ. - Max. -1.3 Unit V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board, t<5sec ; 180/W when mounted on min. copper pad. 3/7 AP2531GY N-Channel 10 10 8 T A =25 C o ID , Drain Current (A) 6 ID , Drain Current (A) 5.0 V 4.5 V 2.5 V 1.8 V 8 T A = 150 o C 5.0 V 4.5 V 2.5 V 1.8 V 6 4 4 V G = 1.0 V 2 V G = 1.0 V 2 0 0 1 2 3 4 0 0 1 2 3 4 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 320 1.8 ID=2A Normalized RDS(ON) 220 I D =3A V G =10V 1.4 T A =25 o C RDS(ON) (m ) 120 1.0 20 0 2 4 6 8 0.6 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 3 Normalized VGS(th) (V) 1.5 2 IS(A) T j =150 o C T j =25 o C 1.0 1 0.5 0 0 0.2 0.4 0.6 0.8 1 0.0 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 4/7 AP2531GY N-Channel f=1.0MHz 12 1000 VGS , Gate to Source Voltage (V) 9 ID=3A V DS = 10 V C (pF) C iss 6 100 C oss C rss 3 0 0 5 10 15 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthja) Duty factor=0.5 10 100us 1ms ID (A) 1 0.2 0.1 0.1 PDM t T Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 180/W 10ms 0.1 0.05 T A =25 o C Single Pulse 100ms 1s DC 0.02 0.01 Single Pulse 0.01 0.1 1 10 100 0.01 0.0001 0.001 0.01 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 10 V DS =5V 8 VG QG 4.5V QGS QGD ID , Drain Current (A) T j =25 o C 6 T j =150 o C 4 2 Charge 0 0 1 2 3 Q V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 5/7 AP2531GY P-Channel 10 10 T A = 25 C 8 o -5.0 V - 4.5 V - 2.5 V -ID , Drain Current (A) T A = 150 C 8 o - 5.0 V - 4.5 V - 2.5 V -ID , Drain Current (A) 6 6 -1.8 V 4 - 1.8 V 4 2 V G = - 1.0 V 2 V G = - 1.0 V 0 0 2 4 6 0 0 2 4 6 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 550 1.8 I D = -1 .6 A 450 T A =25 o C Normalized RDS(ON) 1.4 I D = -2 A V G = -10 V RDS(ON) (m) 350 250 1.0 150 50 0 2 4 6 8 0.6 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 2.0 Normalized -VGS(th) (V) 1.5 1.5 -IS(A) 1.0 1.0 T j =150 o C T j =25 o C 0.5 0.5 0.0 0.0 0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 6/7 AP2531GY P-Channel f=1.0MHz 12 1000 -VGS , Gate to Source Voltage (V) I D =-2A V DS =-10V 9 C iss 6 C (pF) 100 C oss C rss 3 0 0 3 6 9 12 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthja) Duty factor=0.5 10 100us -ID (A) 1 0.2 1ms 10ms 0.1 0.1 PDM t T Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja = 180/W 0.05 0.1 o T A =25 C Single Pulse 100ms 1s DC 10 100 0.01 0.2 Single Pulse 0.01 0.1 1 0.01 0.0001 0.001 0.01 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 10 V DS =-5V 8 VG QG -4.5V QGS QGD -ID , Drain Current (A) 6 T j =25 o C T j =150 o C 4 2 Charge 0 Q 0 1 2 3 4 -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 7/7 |
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